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Bulletin I27100 rev. C 03/01
IRK.F180.. SERIES
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR MAGN-A-pak Power Modules
Features
Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved
180 A
Description
These series of MAGN-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
IT(AV) @ TC IT(RMS) ITSM
2
IRK.F180..
180 85 400
Units
A C A A A KA 2s KA 2s KA 2s s s V
o
@ 50Hz @ 60Hz
7130 7470 255 232 2550 20 and 25 2 up to 1200 - 40 to 125
It
@ 50Hz @ 60Hz
I2t tq trr VDRM / V RRM TJ range
C
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
08 IRK.F18012
VRRM/VDRM, maximum repetitive peak reverse voltage V
800 1200
VRSM , maximum nonrepetitive peak rev. voltage V
800 1200
IRRM/I DRM max.
@ T J = 125C
mA
50
Current Carrying Capacity
ITM 180 el 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 85 10/0.47F 370 435 290 240 170 50 80%VDRM 50 60 85 530 650 430 345 270 50
o
Frequency f
ITM 180 el
o
ITM 100s
Units
565 670 490 390 290 50
800 1000 720 540 390 50
2400 1540 610 390 50 80%VDRM
3150 2050 830 540 50
A A A A A V V
80%VDRM 60
85
60
A/s C
10/0.47F
10/0.47F
On-state Conduction
Parameter
IT(AV) IT(RMS) ITSM Maximum average on-state current @ Case temperature Maximum RMS current Maximum peak, one-cycle, non-repetitive surge current
IRK.F180..
180 85 400 7130 7470 6000 6280
Units Conditions
A C A A as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = 125C 180 conduction, half sine wave
I2t
Maximum I2 t for fusing
255 232 180 164
I2 t
Maximum I2 t for fusing
2550 1.30 1.38 0.90 0.71 1.84 600 1000
KA2s t = 0 to 10ms, no voltage reapplied V (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. (I > x IT(AV) ), TJ = TJ max. mW (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. (I > x IT(AV) ), TJ = TJ max. V mA mA Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse TJ = 25C, IT > 30 A TJ = 25C, VA = 12V, Ra = 6, Ig = 1A
VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current
2
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
Switching
Parameter
di/dt Maximum non-repetitive rate of rise
IRK.F180..
800
Units Conditions
A/s Gate drive 20V, 20, tr 1ms, VD= 80% VDRM T J = 25C ITM = 350A, di/dt = -25A/s, VR = 50V, TJ = 25C ITM = 750A, T J = 125C, di/dt = -25A/s, s VR = 50V, dv/dt = 400V/s linear to 80% V DRM
trr tq
Maximum recovery time Maximum turn-off time K 20
2 J 25
s
Blocking
Parameter
dv/dt Maximum critical rate of rise of off-state voltage VINS IRRM IDRM RMS isolation voltage Maximum peak reverse and off-state leakage current 3000 50 V mA 50 Hz, circuit to base, TJ = 25C, t = 1 s TJ = 125C, rated VDRM/VRRM applied
IRK.F180..
1000
Units Conditions
V/s TJ = 125C., exponential to = 67% VDRM
Triggering
Parameter
P GM P G(AV) IGM - VGM IGT V GT IGD V GD Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Max. DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger
IRK.F180..
60 10 10 5 200 3 20 0.25
Units Conditions
W W A V mA V mA V TJ = 125C, rated VDRM applied TJ = 25C, Vak 12V, Ra = 6 f = 50 Hz, d% = 50 TJ = 125C, f = 50Hz, d% = 50 TJ = 125C, tp < 5ms
Thermal and Mechanical Specifications
Parameter
TJ T stg R thJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case R thC-hs Max. thermal resistance, case to heatsink T Mounting torque 10% MAP to heatsink busbar to MAP wt Approximate weight 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) Nm 0.02 K/W Mounting surface flat and greased Per module
A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow (lb*in) for the spread of the compound. Use of cable lugs is not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound
IRK.F180..
- 40 to 125 - 40 to 150 0.125
Units Conditions
C
K/W
Per junction, DC operation
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
0.009 0.010 0.014 0.020 0.032 0.006 0.011 0.015 0.020 0.033
Units
K/W
Conditions
TJ = 125C
Ordering Information Table
Device Code
IRK
1
T
2
F
3
180
4
-
12
5
H
6
K
7
1 2 3 4 5 6 7
- Module type - Circuit configuration - Fast SCR - Current rating: IT(AV) x 10 rounded - Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - dv/dt code: H 400V/s - tq code: K 20s J 25s
NOTE: To order the Optional Hardware see Bulletin I27900 4 www.irf.com
IRK.F180.. Series
Bulletin I27100 rev. C 03/01
Outline Table
- All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0 IRKTF.. IRKHF.. IRKLF.. IRKUF.. IRKVF.. IRKKF.. IRKNF..
M a xim um A llo w a ble C ase Tem pera ture ( C )
120 110 100 90
IR K.F180.. Series R thJC (D C ) = 0.12 5 K/W
M ax im um Allow a ble C ase Tem pera ture ( C )
130
130 120 110 100 90 80 70 60 0 50
IR K.F1 8 0 .. Se ries R thJC (D C ) = 0 .1 2 5 K /W
C o n d u ctio n A n g le
C o n d u c tio n Pe rio d
30 80 70 60 0 40 80 120 160 200 Averag e O n -state C urren t (A ) 60 90 120 180
30 60 90 120 1 80 100 150 200 DC 250 300
Averag e O n-state C urren t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
M axim um Ave rag e O n -state Pow er Lo ss (W ) M axim um Av erag e O n-state Po w e r Loss (W ) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 180 A ve ra g e O n-sta te C urre n t (A) RM S Lim it
C ond uctio n An gle
450 400 350 300 250 200 RM S Lim it 150 100 50 0 0 50 100 150 200 250 300 A verag e O n-sta te C urre n t (A )
C on d u c tio n Pe riod
1 80 1 20 90 60 30
DC 180 120 90 60 30
IRK.F1 80 .. Series Per Ju n ction T J = 1 25 C
IRK.F18 0.. Series Per Junction T J = 12 5 C
Fig. 3 - On-state Power Loss Characteristics
6500 6000 5500 5000 4500 4000 3500 3000 1 10 100
Nu m b er O f E qu a l Am plitu d e Half C yc le C u r re nt Pu lse s (N)
Fig. 4 - On-state Power Loss Characteristics
7500 7000 6500 6000 5500 5000 4500 4000 3500 3000 IRK.F180.. Series Pe r Jun ctio n 0.1 Pu ls e Train D uration (s) 1
M a xim um No n Rep etitiv e Surg e C urrent V ers us Pulse Tra in D ura tio n . C ontro l O f C o nduction May Not Be Maintained. In itial T J = 125 C N o V o lta g e R e a p p lie d Ra te d V RR MR e a pp lie d
Pea k Ha lf Sine W a ve O n -state C urren t (A)
A t A ny Rate d Loa d C o nd itio n A nd W ith Rate d V R RM A p plie d Fo llo w ing Surg e . In itial T J = 125 C @ 60 H z 0.0083 s @ 50 H z 0.0100 s
IRK.F18 0.. S eries Pe r Jun ctio n
Pe a k H alf Sin e W av e O n-state C urre n t (A )
2500 0.01
Fig. 5 - Maximum Non-Repetitive Surge Current
10000 Instan ta neous O n -state C urren t (A )
Fig. 6 - Maximum Non-Repetitive Surge Current
1 Ste a dy Sta te V a lue: R thJ C = 0.125 K/W (D C O p eratio n) 0.1
1000 T J = 25 C T J = 12 5 C IR K.F1 80.. Series Per Ju n ctio n 100 1 2 3 4 5 6 7 In sta n ta n e o us O n -sta te V olta g e (V )
Transient Therm al Im pedanc e Z thJC (K/W )
0.01
IRK.F180 .. Series Per Junctio n 0.001 0.001 0.01 0.1 1 10 100
Sq u are W a ve Pulse D ura tio n (s)
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
6
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
M axim u m Re verse Rec ove ry C h arg e - Q rr ( C ) M axim um Re verse Rec o very C urre nt - Irr (A) 320 300 280 260 240 220 200 180 160 140 120 100 80 10 20 30 40 50 60 70 80 90 100 Ra te O f Fa ll O f Fo rw a rd C urre n t - d i/d t (A/ s) IRK.F 180.. Se ries T J = 125 C
I TM = 1000 A 500 A 300 A 200 A 100 A
180 160 140 120 100 80 60 40 20 10 20 30 40 50 60 70 80 90 100 Rate O f Fall O f Fo rw a rd C urren t - d i/dt (A/ s) IRK.F180.. Series T J = 125 C
I TM = 1000A 5 00A 3 00A 2 00A 1 00A
Fig. 9 - Reverse Recovery Charge Characteristics
1E4
Fig. 10 - Reverse Recovery Current Characteristics
P eak On-state C urre nt ( A)
50 H z 150
150 40 0 1000 2 50 0 5 00 0
50 H z
1E3
2 50 0 5 00 0
1000
400
1E2
IRK .F180.. Serie s Sinuso id a l p ulse T C= 85 C Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M IRK .F 180.. Series Sinusoid a l pulse T C= 60 C Snub b e r circ uit R s = 10 ohm s C s = 0.47 F V D = 80% V D RM
tp 1E1 1E1
tp
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Ba sewid th ( s)
Pulse Ba sewid th ( s)
Fig. 11 - Frequency Characteristics
1E4
Pea k On -sta te C urrent (A )
50 H z
1E3
1 00 0 2 50 0 5000
150 40 0 1 00 0 2 50 0
5 00 0
50 H z 150 400
1E2
IRK .F180.. Series Tra p ezo id a l p ulse T C = 8 5 C d i/d t 50A/ s Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M IRK .F180.. Series Tra p ezoid a l p ulse T C = 85 C d i/d t 100A/ s Snub b er circuit R s = 10 ohm s C s = 0.47 F V D= 80% V D RM
tp 1E1 1E1
tp 1E4 E1 1E4 1E1
1E2
1E3
1E2
1E3
1E4
Pulse Base w id th ( s)
Pulse Base w idth ( s)
Fig. 12 - Frequency Characteristics
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
1E4
P eak O n -sta te C urren t (A )
50 H z 1 50 150 400 1 00 0 2 50 0 5000
50 H z
1E3
2 50 0 5 00 0
40 0 1 00 0
1E2
IRK .F1 80.. Se rie s Tra p ezoid a l p ulse T C = 60 C d i/d t 50A/ s Snub b er circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M IRK .F 180.. Series Tra p ezoid a l p ulse T C = 60 C d i/d t 100A/ s Snub b e r circuit R s = 10 ohm s C s = 0.47 F V D = 80% V D R M
tp 1E1 1E1
tp
1E2
1E3
1E4 E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth ( s)
Pulse Ba se w idth ( s)
Fig. 13 - Frequency Characteristics
1E4
10 jou les p er p u lse 5 2 .5 10 jou les p er p ulse 5 2 .5 1 0 .5 0 .25 0 .1 0 .0 5
P ea k O n -state C urre n t ( A)
1 0 .5
1E3
0 .1 0 .0 5
0 .2 5
1E2
IRK.F 180.. Series Sinuso id a l p ulse IRK.F180.. Series Tra p ezo id a l p ulse d i/d t 50A / s
tp 1E1 1E1
tp 1E2 1E3 1E4 1E1 1E4 E1
1E2
1E3
1E4
Pulse Base w id th ( s)
Pulse Ba se w idth ( s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantaneo us G ate Voltage (V) Recta n g u lar g a te p u lse a ) R eco m m en d ed lo a d lin e fo r ra ted d i/d t : 1 0V , 1 0o hm s b ) Reco m m en d ed lo a d line fo r <= 3 0% ra ted d i/d t : 1 0V , 20 o h m s 10 (a ) (b )
Tj=25 C Tj=125 C Tj=-40 C
(1) (2) (3) (4)
PG M PG M PG M PG M
= = = =
8W , tp = 25m s 20W , tp = 1m s 40W , tp = 5m s 80W , tp = 2.5m s
1
(1)
(2)
(3)
(4)
VGD IG D 0.1 0.01 0.1 IRK.F180.. Serie s 1 Instantaneo us G ate C urre nt (A) Fre que ncy Lim ite d by PG (AV) 10 100
Fig. 15 - Gate Characteristics
8
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